AS4C256K16EO-35JC CMOS DRAM (EDO)

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AS4C256K16E0-35JC
5V 256Kx16 CMOS DRAM (EDO) – Alliance Semiconductor Corporation
• Organization: 262,144 words × 16 bits
• High speed
– 30/35/50 ns RAS access time
– 16/18/25 ns column address access time
– 7/10/10/10 ns CAS access time
• Low power consumption
– Active: 500 mW max (AS4C256K16E0-25)
– Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
• EDO page mode
• Refresh
– 512 refresh cycles, 8 ms refresh interval
– RAS-only or CAS-before-RAS refresh or self-refresh
– Self-refresh option is available for new generation device
only. Contact Alliance for more information.
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
– 400 mil, 40-pin SOJ
– 400 mil, 40/44-pin TSOP II
• 5V power supply
• Latch-up current > 200 mA

R$8,00

Fora de estoque

AS4C256K16E0-35JC
5V 256Kx16 CMOS DRAM (EDO) – Alliance Semiconductor Corporation
• Organization: 262,144 words × 16 bits
• High speed
– 30/35/50 ns RAS access time
– 16/18/25 ns column address access time
– 7/10/10/10 ns CAS access time
• Low power consumption
– Active: 500 mW max (AS4C256K16E0-25)
– Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
• EDO page mode
• Refresh
– 512 refresh cycles, 8 ms refresh interval
– RAS-only or CAS-before-RAS refresh or self-refresh
– Self-refresh option is available for new generation device
only. Contact Alliance for more information.
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
– 400 mil, 40-pin SOJ
– 400 mil, 40/44-pin TSOP II
• 5V power supply
• Latch-up current > 200 mA

SKU: 376gv2407 Categoria: